Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT

This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. was grown on sapphire substrate. Prior to growth AlGaN layer, GaN layer via two-step growth. In first step, V/III ratio applied at 1902 and then 3046 in second step. The FWHMs XRD (002) (102) peaks were around 205 arcsec ((002) peak) 277 ((102) peak). Moreover, surface showed clear evidence step flows, which resulted smooth as well overgrown layer. Subsequently, fabricated into a HEMT with wide gate-to-drain length (LGD). device exhibited working characteristic high breakdown voltages up 497 V. comparison many reported HEMTs, no interlayer inserted our heterostructure. By improving conditions growth, performance HEMTs could be improved further.